STBV32 high voltage fast-switching npn power transistor n medium voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications: n electronic ballasts for fluorescent lighting description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the STBV32 is designed for use in compact fluorescent lamp application. ordering codes: STBV32 (shipment in bulk) STBV32-ap (shipment in ammopack) ? internal schematic diagram august 2001 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0, i b = 0.5 a, t p < 10 m s, t j < 150 o c) bv ebo v i c collector current 1 a i cm collector peak current (t p < 5 ms) 3 a i b base current 0.5 a i bm base peak current (t p < 5 ms) 1.5 a p tot total dissipation at t amb = 25 o c 1.1 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c to-92 1/7
thermal data r thj-a thermal resistance junction-ambient max 112 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = 700v v ce = 700v t j = 125 o c 1 5 ma ma bv ebo emitter-base breakdown voltage (i c = 0) i e = 10 ma 9 18 v v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 10 ma l = 25mh 400 v v ce(sat) * collector-emitter saturation voltage i c = 0.5 a i b = 0.1 a i c = 1 a i b = 0.25 a i c = 1.5 a i b = 0.5 a 0.5 1 3 v v v v be(sat) * base-emitter saturation voltage i c = 0.5 a i b = 0.1 a i c = 1 a i b = 0.25 a 1 1.2 v v h fe dc current gain i c = 0.5 a v ce = 2 v i c = 1 a v ce = 2 v 8 5 35 25 t r t s t f resistive load rise time storage time fall time i c = 1 a v cc = 125 v i b1 = 0.2 a i b2 = -0.2 a t p = 25 m s 1 4 0.7 m s m s m s t s inductive load storage time i c = 1 a i b1 = 0.2 a v be = -5 v l = 50 mh v clamp = 300 v 0.8 m s * pulsed: pulse duration = 300 m s, duty cycle = 1.5 %. STBV32 2/7
safe operating areas dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage STBV32 3/7
inductive fall time inductive storage time reverse biased soa STBV32 4/7
figure 1: inductive load switching test circuits. figure 2: resistive load switching test circuits. 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor STBV32 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.58 5.33 0.180 0.210 b 4.45 5.2 0.175 0.204 c 3.2 4.2 0.126 0.165 d 12.7 0.500 e1.27 0.050 f 0.4 0.51 0.016 0.020 g0.35 0.14 to-92 mechanical data STBV32 6/7
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